? semiconductor components industries, llc, 2013 september, 2013 ? rev. 11 1 publication order number: mjf6388/d mjf6388 (npn), MJF6668 (pnp) complementary power darlingtons for isolated package applications designed for general?purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. features ? isolated overmold package ? electrically similar to the popular 2n6388, 2n6668, tip102, and tip107 ? no isolating washers required, reduced system cost ? high dc current gain ? high isolation voltage ? ul recognized at 3500 vrms: file #e69369 ? these devices are pb?free and are rohs compliant* maximum ratings rating symbol value unit collector?emitter voltage v ceo 100 vdc collector?base voltage v cb 100 vdc emitter?base voltage v eb 5.0 vdc rms isolation voltage (note 1) (t = 0.3 sec, r.h. 30%, t a = 25 c) per figure 14 v isol 4500 v collector current ? continuous i c 10 adc collector current ? peak (note 2) i cm 15 adc base current ? continuous i b 1.0 adc total power dissipation (note 3) @ t c = 25 c derate above 25 c p d 40 0.31 w w/ c total power dissipation @ t a = 25 c derate above 25 c p d 2.0 0.016 w w/ c operating and storage temperature range t j , t stg ?65 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. proper strike and creepage distance must be provided. 2. pulse test: pulse width = 5.0 ms, duty cycle 10%. 3. measurement made with thermocouple contacting the bottom insulated surface (in a location beneath the die), the devices mounted on a heatsink with thermal grease and a mounting torque of 6 in. lbs. ??????????????????? ??????????????????? thermal characteristics ????????????? ????????????? ??? ??? ??? ??? ??? ??? ????????????? ????????????? thermal resistance, junction?to?case (note 4) ??? ??? jc ??? ??? ??? ??? c/w ????????????? ????????????? ??? ??? ja ??? ??? ??? ??? c/w ????????????? ??? ??? ??? c 4. measurement made with thermocouple contacting the bottom insulated surface (in a location beneath the die), the devices mounted on a heatsink with thermal grease and a mounting torque of 6 in. lbs. device package shipping ordering information to?220 fullpack case 221d style 2 ul recognized 3 1 complementary silicon power darlingtons 10 amperes 100 volts, 40 watts 2 http://onsemi.com MJF6668g 50 units/rail mjf6388g to?220 fullpack (pb?free) 50 units/rail mjf6xy8 = specific device code x = 3 or 6 y = 6 or 8 g = pb?free package a = assembly location y = year ww = work week marking diagram to?220 fullpack (pb?free) *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. collector 2 base 1 emitter 3 collector 2 base 1 emitter 3 mjf6388 (npn) MJF6668 (pnp) mjf6xy8g ayww
mjf6388 (npn), MJF6668 (pnp) http://onsemi.com 2 electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector?emitter sustaining voltage (note 5) (i c = 30 madc, i b = 0) v ceo(sus) 100 ? vdc collector cutoff current (v ce = 80 vdc, i b = 0) i ceo ? 10 adc collector cutoff current (v ce = 100 vdc, v eb(off) = 1.5 vdc) (v ce = 100 vdc, v eb(off) = 1.5 vdc, t c = 125 c) i cex ? ? 10 3.0 adc madc collector cutoff current (v cb = 100 vdc, i e = 0) i cbo ? 10 adc emitter cutoff current (v be = 5.0 vdc, i c = 0) i ebo ? 2.0 madc on characteristics (note 5) dc current gain (i c = 3.0 adc, v ce = 4.0 vdc) (i c = 5.0 adc, v ce = 3.0 vdc) (i c = 8.0 adc, v ce = 4.0 vdc) (i c = 10 adc, v ce = 3.0 vdc) h fe 3000 1000 200 100 15000 ? ? ? ? collector?emitter saturation voltage (i c = 3.0 adc, i b = 6.0 madc) (i c = 5.0 adc, i b = 0.01 adc) (i c = 8.0 adc, i b = 80 madc) (i c = 10 adc, i b = 0.1 adc) v ce(sat) ? ? ? ? 2.0 2.0 2.5 3.0 vdc base?emitter saturation voltage (i c = 5.0 adc, i b = 0.01 adc) (i c = 10 adc, i b = 0.1 adc) v be(sat) ? ? 2.8 4.5 vdc base?emitter on voltage (i c = 8.0 adc, v ce = 4.0 vdc) v be(on) ? 2.5 vdc dynamic characteristics small?signal current gain (i c = 1.0 adc, v ce = 5.0 vdc, f test = 1.0 mhz) |h fe | 20 ? ? output capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) mjf6388 MJF6668 c ob ? ? 200 300 pf insulation capacitance (collector?to?external heatsink) c c?hs ? 3.0 typ pf small?signal current gain (i c = 1.0 adc, v ce = 5.0 vdc, f = 1.0 khz) h fe 1000 ? ? 5. pulse test: pulse width 300 s, duty cycle 2.0%. base emitter collector 8 k 120 base emitter collector 8 k 120 npn mjf6388 pnp MJF6668 figure 1. darlington schematic
mjf6388 (npn), MJF6668 (pnp) http://onsemi.com 3 0.3 figure 2. switching times test circuit v cc = 30 v i c /i b = 250 i b1 = i b2 t j = 25 c 0.1 10 0.5 2 5 5 i c , collector current (amps) t, time (s) 1 0.2 0.1 7 figure 3. typical switching times t s 0.3 3 0.2 1 0.07 0.7 v cc = 30 v i c /i b = 250 i b1 = i b2 t j = 25 c 0.1 0.7 10 0.5 0.3 25 5 i c , collector current (amps) t, time (s) 1 0.2 0.1 7 3 0.2 1 10 0.7 37 npn mjf6388 pnp MJF6668 v ce , collector-emitter voltage (volts) figure 4. maximum forward bias safe operating area 1 20 0.3 30 current limit secondary breakdown limit thermal limit @ t c = 25 c (single pulse) i c , collector current (amps) 0.02 23 50 3 0.05 10 0.03 dc t j = 150 c 1ms 5 ms 100 s 2 5 0.1 5 100 20 0.5 2 10 0.2 0.5 1 120 8 k v 1 approx. +12 v v 2 approx. -8 v 25 s r b 51 d 1 -4 v v cc + 30 v r c scope tut t r , t f 10 ns duty cycle = 1% for t d and t r , d 1 is disconnected and v 2 = 0 for npn test circuit reverse all polarities. r b & r c varied to obtain desired current levels d 1 , must be fast recovery types, e.g., mur110 used above i b 100 ma msd6100 used below i b 100 ma t f t r t d t r t s t d t f
mjf6388 (npn), MJF6668 (pnp) http://onsemi.com 4 t, time (ms) 0.01 0.01 0.05 1 2 5 10 20 50 500 100k 0.1 0.5 0.2 1 0.2 0.1 0.05 r(t), transient thermal r jc (t) = r(t) r jc r jc = c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) r jc(t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 single pulse resistance (normalized) figure 5. thermal response 0.5 d = 0.5 0.3 0.03 0.02 0.02 100 200 330 0.3 300 1k 2k 5k 10k 20k 50k 3k 30k 0.2 0.1 0.05 t c , case temperature ( c) 0 40 120 160 0.6 power derating factor second breakdown derating 1 0.8 0.4 0.2 60 100 140 80 thermal derating 20 figure 6. maximum power derating there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 4 is based on t j(pk) = l50 c; t c is variable depending on conditions. secondary breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) < 150 c. t j(pk) may be calculated from the data in figure 5. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown. figure 7. typical small?signal current gain f, frequency (khz) h fe , small-signal current gain t c = 25 c v ce = 4 vdc i c = 3 adc 10,000 200 100 1000 500 300 10 30 2000 3000 5000 1 1000 50 10 5 100 500 2 20 200 20 50 f, frequency (khz) h fe , small-signal current gain 10,000 200 100 1000 500 10 2000 5000 1 1000 50 10 5 100 500 2 20 200 20 50 npn mjf6388 pnp MJF6668 t c = 25 c v ce = 4 volts i c = 3 amps 3 30 300 70 7
mjf6388 (npn), MJF6668 (pnp) http://onsemi.com 5 v ce , collector-emitter voltage (volts) v ce , collector-emitter voltage (volts) 70 300 30 200 100 50 v r , reverse voltage (volts) c, capacitance (pf) c ib c ob 0.1 100 5 1 0.5 10 50 0.2 2 20 t j = 25 c npn mjf6388 pnp MJF6668 70 300 30 200 100 50 v r , reverse voltage (volts) c, capacitance (pf) c ib c ob 0.1 100 5 1 0.5 10 50 0.2 2 20 t j = 25 c i c , collector current (amp) 0.1 i c , collector current (amp) 200 0.2 0.5 3000 1000 10,000 h fe , dc current gain v ce = 4 v t j = 150 c 5000 0.3 1 25 c -55 c 2000 0.7 3 20,000 300 500 510 h fe , dc current gain i b , base current (ma) 2.6 2.2 1.8 1.4 0.3 0.5 0.7 5 23 i c = 2 a 4 a 1 6 a t j = 25 c 3 1 72030 i b , base current (ma) 2.6 2.2 1.8 1.4 10 3 1 200 3000 1000 10,000 5000 2000 20,000 300 500 2 7 0.1 0.2 0.5 0.3 1 0.7 3 5 10 27 v ce = 4 v t j = 150 c 25 c -55 c i c = 2 a 4 a 6 a 700 7000 figure 8. typical capacitance figure 9. typical dc current gain figure 10. typical collector saturation region 0.3 0.5 0.7 5 23 1 7 20 30 10 t j = 25 c
mjf6388 (npn), MJF6668 (pnp) http://onsemi.com 6 npn mjf6388 pnp MJF6668 0.1 v , temperature coefficient (mv/ c) 10 -1 0 +0.4 -0.2 -0.4 -0.6 +0.6 +0.2 -0.8 -1 -1.2 -1.4 i c , collector current (amp) 0 *i c /i b h fe/3 -5 10 4 v be , base-emitter voltage (volts) 10 -1 0 - 0.4 , collector current (a) i c 10 3 10 2 10 1 10 0 +0.2 +0.4 +0.6 t j = 150 c 100 c reverse forward 25 c v ce = 30 v 10 5 -0.6 -0.2 +0.8 +1 +1.2 +1.4 10 4 v be , base-emitter voltage (volts) , collector current (a) i c 10 3 10 2 10 1 10 0 t j = 150 c 100 c reverse forward 25 c v ce = 30 v 10 5 -4 -3 -2 -1 vb for v be 25 c to 150 c i c , collector current (amp) figure 11. typical ?on? voltages figure 12. typical temperature coefficients 0.1 i c , collector current (amp) 2 1.5 v, voltage (volts) 3 2.5 1 0.5 0.2 0.5 5 0.3 1 0.7 3 10 i c , collector current (amp) 2 1.5 v, voltage (volts) 3 2.5 1 0.5 t j = 25 c v be(sat) @ i c /i b = 250 v be @ v ce = 4 v v ce(sat) @ i c /i b = 250 t j = 25 c v be(sat) @ i c /i b = 250 v be @ v ce = 4 v v ce(sat) @ i c /i b = 250 v , temperature coefficient (mv/ c) 7 2 0.1 0.2 0.5 5 0.3 1 0.7 3 10 7 2 0.2 0.5 5 0.3 1 0.7 3 10 7 2 0.1 0.2 0.5 5 0.3 1 3 10 7 2 +1 +2 +3 +4 +5 0 -5 -4 -3 -2 -1 +1 +2 +3 +4 +5 -55 c to 25 c *i c /i b h fe/3 figure 13. typical collector cut?off region 0.7 25 c to 150 c -55 c to 25 c 25 c to 150 c -55 c to 25 c * vc for v ce(sat) * vc for v ce(sat) vb for v be 25 c to 150 c -55 c to 25 c
mjf6388 (npn), MJF6668 (pnp) http://onsemi.com 7 test condition for isolation test* fully isolated package leads heatsink 0.110 min figure 14. mounting position *measurement made between leads and heatsink with all leads shorted together. 4-40 screw plain washer heatsink compression washer nut clip heatsink laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. the compression washer helps to maintain a con- stant pressure on the package over time and during large temperature excursions. destructive laboratory tests show that using a hex head 4?40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. additional tests on slotted 4?40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the pack- age. however, in order to positively ensure the package integrity of the fully isolated device, on semiconductor does not reco mmend exceeding 10 in . lbs of mounting torque under any mounting conditions. figure 15. typical mounting techniques* mounting information ** for more information about mounting power semiconductors see application note an1040 .
mjf6388 (npn), MJF6668 (pnp) http://onsemi.com 8 package dimensions to?220 fullpak case 221d?03 issue k style 2: pin 1. base 2. collector 3. emitter dim a min max min max millimeters 0.617 0.635 15.67 16.12 inches b 0.392 0.419 9.96 10.63 c 0.177 0.193 4.50 4.90 d 0.024 0.039 0.60 1.00 f 0.116 0.129 2.95 3.28 g 0.100 bsc 2.54 bsc h 0.118 0.135 3.00 3.43 j 0.018 0.025 0.45 0.63 k 0.503 0.541 12.78 13.73 l 0.048 0.058 1.23 1.47 n 0.200 bsc 5.08 bsc q 0.122 0.138 3.10 3.50 r 0.099 0.117 2.51 2.96 s 0.092 0.113 2.34 2.87 u 0.239 0.271 6.06 6.88 seating plane ?t? u c s j r notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch 3. 221d-01 thru 221d-02 obsolete, new standard 221d-03. ?b? ?y? g n d l k h a f q 3 pl 123 m b m 0.25 (0.010) y on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distribut ors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 mjf6388/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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